Quantum Mechanical Modeling of Electron-Photon Interactions in Nanoscale Devices
نویسندگان
چکیده
An efficient quantum mechanical approach is formulated to model electron-photon interactions in nanoscale devices. Based on nonequilibrium Green’s function formalism, electron-photon interactions and open boundaries in the nanoscale systems are taken into account in terms of selfenergies. By separating different components in the electron-photon interactions, optical absorption and emission processes in the devices can be analyzed, and the method allows studies of different optoelectronic devices. In conjunction with density-functional tight-binding method, photo-induced current and other optical properties of nanoscale devices can be simulated without relying on empirical parameters. To demonstrate our approach, numerical studies of gallium nitride nanowire solar cells of realistic sizes are presented.
منابع مشابه
Analysis of Kirk Effect in Nanoscale Quantum Well Heterojunction Bipolar Transistor Laser
In this paper, we present an analytical model to analysis the kirk effect onstatic and dynamic responses of quantum well heterojunction bipolar transistor lasers(HBTLs). Our analysis is based on solving the kirk current equation, continuityequation and rate equations of HBTL. We compare the performance (current gain,output photon number and small signal modulation bandwi...
متن کاملQuantum current modeling in nano-transistors with a quantum dot
Carbon quantum dots (CQDs) serve as a new class of ‘zero dimensional’ nanomaterial’s in thecarbon class with sizes below 10 nm. As light emitting nanocrystals, QDs are assembled from semiconductormaterials, from the elements in the periodic groups of II-VI, III-V or IV-VI, mainly thanks to impacts of quantum confinement QDs have unique optical properties such as brighter, highly pho...
متن کاملQuantum Approach to Electronic Noise Calculations in the Presence of Electron-Phonon Interactions
A quantum-mechanical approach to the calculation of electronic noise for nanoscale devices is presented. This method is based on the nonequilibrium Green's-function formalism with electron-phonon scattering mechanisms and takes the effects of the Pauli exclusion principle and the long-range Coulomb interactions into account. As examples the drain current noise characteristics of silicon nanowir...
متن کاملNumerical Simualtion of Nanoscale Semiconductor Devices
Device modeling of novel semiconductor devices requires adapted physical models which include quantum mechanical effects. The quantum hydrodynamic as well as the quantum drift diffusion model offers effective possibilities for the simulation of nanoscale devices, particularly if tunneling processes appear. The models can be implemented effectively in conventional device simulation systems.
متن کاملNanotube MEMS: Modeling extreme nanoscale devices
The physics of operation of nanotube NEMS devices is reviewed. Special attention is paid to non-classical effects, rarely described in MEMS analysis, such as van der Waals/Casimir interactions, quantum effects in electrostatics, atomistic parameterization of elasticity. As an example of a breakdown of a classical MEMS theory, the NEMS scaling limitation is derived in a lump model taking into ac...
متن کامل